This resulted in a reduced function purpose and the formation of the Schottky Get in touch with concerning the BrGO and n-sort Si substrate. Due to the higher proportion of B-C and B-C3 bonding in the BrGO/Si machine than that from the rGO/Si, the lowered Schottky barrier height with the BrGO/n-Si vertical junction photodetector resulted in a highe

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